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2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
SST-GP1214A2.4 GHz High Gain High Power PA
Preliminary Specifications
FEATURES:
* Medium Gain: - Typically 29 dB gain across 2.4~2.5 GHz over temperature 0C to +85C High linear output power: - >29 dBm P1dB (Exceeding maximum rating of average output power, never measure with CW source! Pulsed single-tone source with <50% duty cycle is recommended.) - Meets 802.11g OFDM ACPR requirement up to 23 dBm - ~4% added EVM up to 21.5 dBm for 54 Mbps 802.11g signal - Meets 802.11b ACPR requirement up to 23 dBm High power-added efficiency/Low operating current for both 802.11g/b applications - ~23%/210 mA @ POUT = 22 dBm for 802.11g - ~25%/240 mA @ POUT = 23 dBm for 802.11b Single-pin low IREF power-up/down control - IREF <2 mA Low idle current - ~70 mA ICQ High-speed power-up/down - Turn on/off time (10%~90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns * High temperature stability - ~1 dB gain/power variation between 0C to +85C * Low shut-down current (< 0.1 A) * Excellent On-chip power detection - <+/- 0.3dB variation between 0C to +85C - <+/- 0.4dB variation with 2:1 VSWR mismatch - <+/- 0.3dB variation Ch1 through Ch14 * 20 dB dynamic range on-chip power detection * Simple input/output matching * Packages available - 16-contact VQFN (3mm x 3mm) - Non-Pb (lead-free) packages available
*
*
APPLICATIONS:
* * * * WLAN (IEEE 802.11g/b) Home RF Cordless phones 2.4 GHz ISM wireless equipment
* * *
PRODUCT DESCRIPTION
The SST12LP14A is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP14A can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It typically provides 29 dB gain with 23% power-added efficiency @ POUT = 22 dBm for 802.11g and 25% power-added efficiency @ POUT = 23 dBm for 802.11b. The SST12LP14A has excellent linearity, typically ~4% added EVM at 21.5 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The SST12LP14A can also be configured for high-efficiency operation (typically 17 dBm linear 54 Mbps 802.11g output power at 85 mA total power consumption) which is desirable in embedded applications such as in hand-held units. The SST12LP14A also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP14A control(c)2005 SST Communications Corp. S71300-01-000 9/05 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
lable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP14A ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications. The SST12LP14A has an excellent on-chip, single-ended power detector, which features wide-range (>15 dB) with dB-wise linearization and high stability over temperature (< +/-0.3 dB 0C to +85C), frequency (<+/-0.3 dB across Channels 1 through 14), and output load (<+/-0.4 dB with 2:1 output VSWR all phases). The excellent onchip power detector provides a reliable solution to board-level power control. The SST12LP14A is offered in 16-contact VQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions.
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
FUNCTIONAL BLOCKS
FUNCTIONAL BLOCK DIAGRAM
VCC1
NC
NC 14
16 NC RFIN RFIN NC 1 2 3
15
13 12 VCC2 11 RFOUT 10 RFOUT
Bias Circuit 4 5 VCCb 6 VREF 7 VREF 8 NC
1300 B1.0
NC 9
Det
(c)2005 SST Communications Corp.
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
PIN ASSIGNMENTS
VCC1
NC
NC 14
16 NC RFIN RFIN NC 1 2 3 4
15
NC 13 12 VCC2 11 RFOUT 10 RFOUT 9 Det 8 NC
1300 16-vqfn P1.0
Top View
(contacts facing down)
RF and DC GND 0 5 VCCb 6 VREF 7 VREF
FIGURE 1: PIN ASSIGNMENTS FOR 16-CONTACT VQFN
PIN DESCRIPTIONS
TABLE 1: PIN DESCRIPTION
Symbol GND NC RFIN RFIN NC VCCb VREF VREF NC Det RFOUT RFOUT VCC2 NC NC NC VCC1 Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Power Supply No Connection No Connection No Connection Power Supply PWR No Connection O O O PWR No Connection Power Supply PWR PWR PWR Pin Name Ground No Connection I I Type1 Function The center pad should be connected to RF ground with several low inductance, low resistance vias Unconnected pin RF input, DC decoupled RF input, DC decoupled Unconnected pin Supply voltage for bias circuit 1st and 2nd stage idle current control 1st and 2nd stage idle current control Unconnected pin On-chip power detector RF output RF output Power supply, 2nd stage Unconnected pin Unconnected pin Unconnected pin Power supply, 1st stage
T1.0 1300
1. I=Input, O=Output
(c)2005 SST Communications Corp.
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 2 through 18 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Input power to pins 2 and 3 (PIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm Average output power (POUT). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm Supply Voltage at pins 5, 12, and 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V Reference voltage to pins 6 and 7 (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds
1. Please consult the factory for the latest information.
OPERATING RANGE
Range Industrial Ambient Temp -40C to +85C VCC 3.3V
TABLE 2: DC ELECTRICAL CHARACTERISTICS
Symbol VCC ICC Supply Current for 802.11g, 22 dBm for 802.11b, 23 dBm ICQ IOFF VREG Idle current for 802.11g to meet EVM<4% @ 21.5dBm Shut down current Reference Voltage for, with 110 resistor 2.75 2.85 210 230 70 0.1 2.95 mA mA mA A V
T2.0 1300
Parameter Supply Voltage at pins 5, 12, 16
Min. 3.0
Typ 3.3
Max. 4.2
Unit V
Test Conditions
(c)2005 SST Communications Corp.
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications TABLE 3: AC ELECTRICAL CHARACTERISTICS FOR CONFIGURATION
Symbol FL-U POUT Parameter Frequency range Output power @ PIN = -6 dBm 11b signals @ PIN = -7 dBm 11g signals G GVAR1 GVAR2 ACPR Added EVM 2f, 3f, 4f, 5f Small signal gain Gain variation over band (2400~2485 MHz) Gain ripple over channel (20 MHz) Meet 11b spectrum mask Meet 11g OFDM 54 Mbps spectrum mask @ 21.5 dBm output with 11g OFDM 54 Mbps signal Harmonics at 22 dBm, without external filters 22 22 0.2 23 23 4 -40 22 21 28 29 0.5 dBm dBm dB dB dB dBm dBm % dBc
T3.1 1300
Min. 2400
Typ
Max. 2485
Unit MHz
(c)2005 SST Communications Corp.
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, TA = 25C, UNLESS OTHERWISE SPECIFIED
0 -5 -10 S12 (dB) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 -15 -20 -25 -30 0.0 Frequency (GHz)
0 -10 -20
S11 (dB)
-30 -40 -50 -60 -70 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 Frequency (GHz)
40 30
0 -5
20 S21 (dB) 10 S22 (dB) 0 -10 -20 -25 -30 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 -30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 -10 -15 -20
Frequency (GHz)
Frequency (GHz)
FIGURE 2: S-PARAMETERS
(c)2005 SST Communications Corp.
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
TWO-TONE MEASUREMENTS TEST CONDITIONS: F = 1 MHZ
30
Output Power (dBm)
25
20
15
2.412 GHz
5
2.472 GHz
0 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4
Input Power (dBm)
FIGURE 3: OUTPUT POWER VERSUS INPUT POWER
36 34
Power Gain (dB)
32 30 28
1300 GainVsPout.0.0
26 24 22 20 14 15 16 17 18 19 20 21 22 23 24 25
2.412 GHz
2.472 GHz
Output Power (dBm)
FIGURE 4: POWER GAIN VERSUS OUTPUT POWER
(c)2005 SST Communications Corp.
1300 PoutVPin.0.0
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
-20
-25
-30
IMD3 (dBc)
-35
1300 IMD3vsPout.0.0
-40
2.412 GHz
-45
2.472 GHz
-50 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
FIGURE 5: IMD3 VERSUS OUTPUT POWER
(c)2005 SST Communications Corp.
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, TA = 25C, 54 MBPS 802.11G OFDM SIGNAL
10
Freq = 2.412 GHZ
0
Freq = 2.442 GHz
-10
Freq = 2.484 GHz
Amplitude (dB)
-20 -30 -40 -50 -60 -70 2.3 5 2.4 0 2.45 2.50 2.55
1300 AmpVSFreq.0.0
Frequency (GHz)
FIGURE 6: 802.11G SPECTRUM MASK AT 23 DBM
10 9 8 7
Freq = 2.412 GHz Freq = 2.442 GHz Freq = 2.484 GHz
EVM (%)
6 5
1300 EVMvsPout.0.0
4 3 2 1 0 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
FIGURE 7: EVM VS OUTPUT POWER
(c)2005 SST Communications Corp. S71300-01-000 9/05
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
27 5 25 0
Supply Current (mA)
22 5 20 0 17 5 15 0 12 5 10 0 75 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
2.412 GHz 2.442 GHz 2.484 GHz 1300 CurrVPout.0.0
S71300-01-000
Output Power (dBm)
FIGURE 8: TOTAL CURRENT CONSUMPTION FOR 802.11G OPERATION
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
1.60 1.50
Detector Voltage (V)
1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24
Freq = 2.412 GHz (0 C) Freq = 2.412 GHz (25 C) Freq = 2.412 GHz (85 C) Freq = 2.412 GHz (Max) Freq = 2.412 GHz (Min)
1300 CH1_OFDM.0.0
Output Power (dBm)
FIGURE 9: CH1 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES
1.60 1.50 1.40
Detector Voltage (V)
1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24
Freq = 2.442 GHz (0 C) Freq = 2.442 GHz (25 C) Freq = 2.442 GHz (85 C) Freq = 2.442 GHz (Max) Freq = 2.442 GHz (Min)
1300 CH7_OFDM.0.0
S71300-01-000
Output Power (dBm)
FIGURE 10: CH7 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
1.60 1.50 1.40
Detector Voltage (V)
1.30 1.20 1.10
1300 CH14_OFDM.0.0
1.00 0.90 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24
Freq = 2.484 GHz (0 C) Freq = 2.484 GHz (25 C) Freq = 2.484 GHz (85 C) Freq = 2.484 GHz (Max) Freq = 2.484 GHz (Min)
Output Power (dBm)
FIGURE 11: CH14 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES
1.60 1.50 1.40
Detector Voltage (V)
1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 2
4
6
8
10
12
14
16
18
20
22
24
Output Power (dBm)
FIGURE 12: DETECTOR CHARACTERISTICS OVER TEMPERATURE AND OVER FREQUENCY WITH 2:1 OUTPUT VSWR ALL PHASES
(c)2005 SST Communications Corp.
S71300-01-000
1300 CHA_OFDM.0.0
Freq = 2.412 GHz (25 C) Freq = 2.442 GHz (25 C) Freq = 2.484 GHz (25 C) Freq = 2.412 GHz (0 C) Freq = 2.442 GHz (0 C) Freq = 2.484 GHz (0 C) Freq = 2.412 GHz (85 C) Freq = 2.442 GHz (85 C) Freq = 2.484 GHz (85 C) Freq = 2.412 GHz (Max) Freq = 2.412 GHz (Min) Freq = 2.442 GHz (Max) Freq = 2.442 GHz (Min) Freq = 2.484 GHz (Max) Freq = 2.484 GHz (Min)
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, TA = 25C, 1 MBPS 802.11B CCK SIGNAL
10 0 -10 -20 -30 -40
1300 AmpVSFreqCCK.0.0 Freq = 2.412 GHZ Freq = 2.442 GHz Freq = 2.484 GHz
Amplitude (dB)
-50 -60 -70 -80 2.35 2.40 2.45 2.50 2.55
Frequency (GHz)
FIGURE 13: 802.11B SPECTRUM MASK AT 23 DBM
275 250
Supply Current (mA)
225 200 175 150 125 100 75 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
2.412 GHz 2.442 GHz 2.484 GHz 1300 CurrVPoutCCK.0.0
S71300-01-000
Output Power (dBm)
FIGURE 14: TOTAL CURRENT CONSUMPTION FOR 802.11B OPERATION
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
1.60 1.50 1.40
Detector Voltage (V)
1.30 1.20 1.10 1.00 0.90
Freq = 2.412 GHz (0 C)
1300 CH1_OFDM.0.0
0.80
Freq = 2.412 GHz (25 C)
0.70 0.60 0 2 4 6 8 10 12 14 16
Freq = 2.412 GHz (85 C)
18
20
22
24
Output Power (dBm)
FIGURE 15: CH1 DETECTOR CHARACTERISTICS OVER TEMPERATURE
1.60 1.50
Detector Voltage (V)
1.40 1.30 1.20 1.10 1.00 0.90
Freq = 2.442 GHz (0 C)
1300 CH7_CCK.0.0
0.80
Freq = 2.442 GHz (25 C)
0.70 0.60 0 2 4 6 8 10 12 14 16
Freq = 2.442 GHz (85 C)
18
20
22
24
Output Power (dBm)
FIGURE 16: CH7 DETECTOR CHARACTERISTICS OVER TEMPERATURE
(c)2005 SST Communications Corp.
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, TA=25C, 1 MBPS 802.11B CCK SIGNAL
1.60 1.50
Detector Voltage (V)
1.40 1.30 1.20 1.10 1.00 0.90
Freq = 2.484 GHz (0 C)
1300 CH14_CCK.0.0
0.80
Freq = 2.484 GHz (25 C)
0.70 0.60 0 2 4 6 8 10 12 14 16
Freq = 2.484 GHz (85 C)
18
20
22
24
Output Power (dBm)
FIGURE 17: CH14 DETECTOR CHARACTERISTICS OVER TEMPERATURE
1.60 1.50 1.40
Freq = 2.412 GHz (25 C) Freq = 2.442 GHz (25 C) Freq = 2.484 GHz (25 C) Freq = 2.412 GHz (0 C) Freq = 2.442 GHz (0 C) Freq = 2.484 GHz (0 C) Freq = 2.412 GHz (85 C) Freq = 2.442 GHz (85 C) Freq = 2.484 GHz (85 C)
Detector Voltage (V)
1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 2
4
6
8
10
12
14
16
18
20
22
24
Output Power (dBm)
FIGURE 18: DETECTOR CHARACTERISTICS OVER TEMPERATURE AND FREQUENCY
(c)2005 SST Communications Corp.
S71300-01-000
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
R2
22 F Vcc
0.1 F 0.1 F
16
15
14
13
27 nH / 0805
1
12
50/225 mil 50 RFin 47 pF 2.0 pF
2
11
50 / 120 mil
47 pF 50 RFOUT
3 Bias circuit 4 5 6 7 8
10
2.4 pF
9
Suggested operation conditions:
10 pF
0.1 F 100 pF R1 110 Det
VREG
1. VCC = 3.3V 2. Center slug to RF ground 3. VREG=2.85V with R1=110 4. R2=0-40 depending on ruggedness requirement under overdrive * Can be replaced by a ~1.2 nH chip inductor for compactness
1300 Schematic.0.1
FIGURE 19: TYPICAL SCHEMATIC FOR HIGH-POWER/HIGH-EFFICIENCY 802.11B/G APPLICATIONS
(c)2005 SST Communications Corp.
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
PRODUCT ORDERING INFORMATION
SST12LP SSTXXLP 14A - QVC XXX - XXX E X Environmental Attribute E1 = non-Pb contact (lead) finish Package Modifier C = 16 contact Package Type QV = VQFN Version Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = SST Communications
1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant".
Valid combinations for SST12LP14A SST12LP14A-QVC SST12LP14A-QVCE SST12LP14A Evaluation Kits SST12LP14A-QVC-K SST12LP14A-QVCE-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
(c)2005 SST Communications Corp.
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
PACKAGING DIAGRAMS
TOP VIEW
SIDE VIEW
0.2
BOTTOM VIEW
See notes 2 and 3 Pin #1 1.7
Pin #1
3.00 0.10 1.7 0.076 0.05 Max 3.00 0.10 1.00 0.80 0.30 0.18
1mm
0.5 BSC
0.45 0.35
Note: 1. Complies with JEDEC JEP95 MO-220I, variant VEED except external paddle nominal dimensions. 2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min).
16-vqfn-3x3-QVC-0.0
16-CONTACT VERY-THIN QUAD FLAT NO-LEAD (VQFN) SST PACKAGE CODE: QVC TABLE 4: REVISION HISTORY
Revision 00 01 Description Date Jun 2005 Sep 2005
* * *
Initial release of data sheet Removed Stability and Ruggedness parms from Table 3 on page 5 Updated the schematic in Figure 19 on page 16
(c)2005 SST Communications Corp.
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A
Preliminary Specifications
CONTACT INFORMATION Marketing
SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605
Sales
NORTH AMERICA Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - North America Tel: 949-495-6437 Fax: 949-495-6364 E-mail: lcrowder@sst.com ASIA PACIFIC NORTH SST Macao H. H. Chang Senior Director, Sales Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: (853) 706-022 Fax: (853) 706-023 E-mail: hchang@sst.com ASIA PACIFIC SOUTH SST Communications Co. Sunny Tzeng Sales Manager 4F-2, No. 24, Lane 123, Sec.6, Min Chuan E. Rd Taipei 114, Taiwan, R.O.C. Tel: +886-22795-6877 Ext. 163 Fax: +886-9792-1241 E-mail: stzeng@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com
EUROPE Silicon Storage Technology Ltd. Ralph Thomson Applications Manager Mark House 9-11 Queens Road Hersham KT12 5LU UK Tel: +44 (0) 1869 321 431 Cell: +44 (0) 7787 508 919 E-mail: rthomson@sst.com JAPAN SST Japan Jun Kamata Sales Director 9F Toshin-Tameike Bldg, 1-1-14 Akasaka, Minato-ku, Tokyo, Japan 107-0052 Tel: (81) 3-5575-5515 Fax: (81) 3-5575-5516 Email: jkamata@sst.com
Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com
(c)2005 SST Communications Corp. S71300-01-000 9/05
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